parameter max. units v ds drain- source voltage -20 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -8.2 i d @ t a = 70c continuous drain current, v gs @ -4.5v -6.6 a i dm pulsed drain current -66 p d @t a = 25c power dissipation 1.8 p d @t a = 70c power dissipation 1.15 linear derating factor 10 mw/c e as single pulse avalanche energy 115 mj v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c 8/11/04 hexfet power mosfet parameter max. units r ja maximum junction-to-ambient 70 c/w thermal resistance v dss = -20v r ds(on) = 0.020 ? description
www.irf.com 1 top view 8 1 2 3 4 5 6 7 d d d g s a d s s trench technology ultra low on-resistance p-channel mosfet very small soic package low profile (<1.1mm) available in tape & reel lead-free new trench hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the new micro8 ? package has half the footprint area of the standard so-8. this makes the micro8 an ideal package for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. ? pd-95634
2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -7.0a, v gs = 0v t rr reverse recovery time ??? 70 105 ns t j = 25c, i f = -2.5a q rr reverse recovery charge ??? 50 75 nc di/dt = 100a/s source-drain ratings and characteristics -66 -1.8
when mounted on 1 inch square copper board, t<10 sec s d g starting t j = 25c, l = 17.8mh r g = 25 ? , i as = -3.6a. (see figure 10) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 ??? ??? v v gs = 0v, i d = -250ua ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.01 ??? v/c reference to 25c, i d = -1ma ??? ??? 0.020 v gs = -4.5v, i d = -7.0a ??? ??? 0.040 v gs = -2.5v, i d = -5.1a v gs(th) gate threshold voltage -0.60 ??? -1.2 v v ds = v gs , i d = -250a g fs forward transconductance 14.5 ??? ??? s v ds = -10v, i d = -7.0a ??? ??? -1.0 v ds = -16v, v gs = 0v ??? ??? -25 v ds = -16v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -12v gate-to-source reverse leakage ??? ??? 100 v gs = 12v q g total gate charge ??? 30 45 i d = -6.0a q gs gate-to-source charge ??? 5.0 7.5 nc v ds = -10v q gd gate-to-drain ("miller") charge ??? 7.0 10.5 v gs = -5.0v t d(on) turn-on delay time ??? 11 ??? v dd = -10v t r rise time ??? 100 ??? i d = -6.0a t d(off) turn-off delay time ??? 125 ??? r g = 6.2 ? t f fall time ??? 172 ??? r d = 1.64 ? c iss input capacitance ??? 2520 ??? v gs = 0v c oss output capacitance ??? 615 ??? pf v ds = -10v c rss reverse transfer capacitance ??? 375 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified)
? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -8.2a 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -7.00v -5.00v -4.50v -3.50v -3.00v -2.70v -2.50v -2.25v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -2.25v 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -7.00v -5.00v -4.50v -3.50v -3.00v -2.70v -2.50v -2.25v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -2.25v 10 100 2.0 2.5 3.0 3.5 4.0 v = -15v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 10 20 30 40 50 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -6.0a v = -10v ds 1 10 100 0.5 1.0 1.5 2.0 2.5 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 -v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0 60 120 180 240 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.6a -2.9a -3.6a 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 1.5 3.0 4.5 6.0 7.5 9.0 t , case temperature ( c) -i , drain current (a) c d
6 www.irf.com micro8 part marking information micro8 package outline dimensions are shown in milimeters (inches) inches millimeters min max min max a 0.10 (.004) 0.25 (.010) m a m h 1 2 3 4 8 7 6 5 d - b - 3 3 e - a - e 6x e 1 - c - b 8x 0.08 (.003) m c a s b s a 1 l 8x c 8x notes: 1 dimensioning and tolerancing per ansi y14.5m-1982. 2 controlling dimension : inch. 3 dimensions do not include mold flash. a .036 .044 0.91 1.11 a1 .004 .008 0.10 0.20 b .010 .014 0.25 0.36 c .005 .007 0.13 0.18 d .116 .120 2.95 3.05 e .0256 basic 0.65 basic e1 .0128 basic 0.33 basic e .116 .120 2.95 3.05 h .188 .198 4.78 5.03 l .016 .026 0.41 0.66 0 6 0 6 dim lead assignments single dual d d d d d1 d1 d2 d2 s s s g s1 g1 s2 g2 1 2 3 4 1 2 3 4 8 7 6 5 8 7 6 5 recommended footprint 1.04 ( .041 ) 8x 0.38 ( .015 ) 8x 3.20 ( .126 ) 4.24 ( .167 ) 5.28 ( .208 ) 0.65 ( .0256 ) 6x lot code (xx) example : t his is an irf 7501 part number p = de s i gnat e s l e ad - f r e e product (optional) w = we e k y = year d at e code (yw) - s ee tabl e bel ow ww = (1-26) if preceded by las t digit of calendar year ye ar y wor k we e k w 9 2009 5 2005 2003 2002 2001 2004 3 2 1 4 2007 2006 2008 7 6 8 2010 0 03 02 01 04 c b a d 26 24 25 z x y b 2002 b 28 ww = (27-52) if preceded by a letter year 2001 y a week wor k 27 w a k 2010 f 2006 2004 2003 2005 d c e 2008 2007 2009 h g j x 50 30 29 d c 51 52 y z
www.irf.com 7 micro8 tape & reel information dimensions are shown in millimeters (inches) 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. outline conforms to eia-481 & eia-541. 2. controlling dimension : millimeter. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/04 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site.
|
